Al-doped and pure ZnO thin films elaborated by sol–gel spin coating process for optoelectronic applications
- Autores: Maache M.1, Devers T.2, Chala A.1
-
Afiliações:
- Department of Science of Matter
- ICMN, IUT Chartres
- Edição: Volume 51, Nº 12 (2017)
- Páginas: 1604-1610
- Seção: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/202026
- DOI: https://doi.org/10.1134/S1063782617120132
- ID: 202026
Citar
Resumo
Pure and aluminum-doped zinc oxide thin films were grown by spin coating at room temperature. As a starting material, zinc acetate was used. The dopant source was aluminum nitrate; the dopant molar ratio was varied between 1 and 10%. Structural analysis reveals that all films consist of single hexagonal wurtzite phase ZnO, and a preferential orientation along c-axis. They have a homogeneous surface. The measurements show that the films are nanostructured. The transmittance is greater than 75% in the visible region. The band gap energy decreases with the addition of dopant (Al) in prepared thin films and the resistivity decreases significantly.
Sobre autores
M. Maache
Department of Science of Matter
Autor responsável pela correspondência
Email: moumos2001@gmail.com
Argélia, Djelfa, 17000
T. Devers
ICMN, IUT Chartres
Email: moumos2001@gmail.com
França, Chartres, 28000
A. Chala
Department of Science of Matter
Email: moumos2001@gmail.com
Argélia, Biskra, 07000