Specific features of the transport properties of the Lu0.1Bi1.9Te3 compound
- Авторлар: Yaprintsev M.1, Lyubushkin R.1, Soklakova O.1, Ivanov O.1
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Мекемелер:
- Belgorod National Research University
- Шығарылым: Том 51, № 8 (2017)
- Беттер: 989-991
- Бөлім: XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/200729
- DOI: https://doi.org/10.1134/S1063782617080322
- ID: 200729
Дәйексөз келтіру
Аннотация
The temperature and electric- and magnetic-field dependences of the resistivity of the R0.1Bi1.9Te3 compound are investigated. It is shown that, in the low-temperature region, variable-range hopping conductivity is realized in this compound. In the temperature range of hopping conductivity, the electrical resistivity decreases with increasing electric-field strength in the sample, which is typical of charge-carrier tunneling from one localized state in the impurity band to another. Investigation of the transverse magnetoresistance revealed the crossover from the parabolic dependence of the magnetoresistance in low fields to the linear dependence in high fields. The established features of the transport properties of the R0.1Bi1.9Te3 compound are characteristic of inhomogeneous and disordered semiconductors.
Авторлар туралы
M. Yaprintsev
Belgorod National Research University
Хат алмасуға жауапты Автор.
Email: yaprintsev@bsu.edu.ru
Ресей, Belgorod, 308015
R. Lyubushkin
Belgorod National Research University
Email: yaprintsev@bsu.edu.ru
Ресей, Belgorod, 308015
O. Soklakova
Belgorod National Research University
Email: yaprintsev@bsu.edu.ru
Ресей, Belgorod, 308015
O. Ivanov
Belgorod National Research University
Email: yaprintsev@bsu.edu.ru
Ресей, Belgorod, 308015