Enviar artigo por via de e-mail In As1–xSbx heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers
- Autores: Guseynov R.1, Tanriverdiyev V.1, Kipshidze G.2, Aliyeva Y.1, Aliguliyeva K.1, Abdullayev N.1, Mamedov N.1
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Afiliações:
- Institute of Physics
- Stony Brook University
- Edição: Volume 51, Nº 4 (2017)
- Páginas: 524-530
- Seção: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/199790
- DOI: https://doi.org/10.1134/S1063782617040066
- ID: 199790
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Resumo
Unrelaxed InAs1–xSbx (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs1–xSbx alloys is established.
Sobre autores
R. Guseynov
Institute of Physics
Email: gela.kishidze@stonybrook.ede
Azerbaijão, Baku, AZ-1143
V. Tanriverdiyev
Institute of Physics
Email: gela.kishidze@stonybrook.ede
Azerbaijão, Baku, AZ-1143
G. Kipshidze
Stony Brook University
Autor responsável pela correspondência
Email: gela.kishidze@stonybrook.ede
Estados Unidos da América, New York, 11794
Ye. Aliyeva
Institute of Physics
Email: gela.kishidze@stonybrook.ede
Azerbaijão, Baku, AZ-1143
Kh. Aliguliyeva
Institute of Physics
Email: gela.kishidze@stonybrook.ede
Azerbaijão, Baku, AZ-1143
N. Abdullayev
Institute of Physics
Email: gela.kishidze@stonybrook.ede
Azerbaijão, Baku, AZ-1143
N. Mamedov
Institute of Physics
Email: gela.kishidze@stonybrook.ede
Azerbaijão, Baku, AZ-1143
