InGaN/GaN light-emitting diode microwires of submillimeter length
- Autores: Lundin W.1, Rodin S.1, Sakharov A.1, Lundina E.1, Usov S.2, Zadiranov Y.1, Troshkov S.1, Tsatsulnikov A.2,3
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Afiliações:
- Ioffe Physical–Technical Institute
- Research and Engineering Center of Submicron Heterostructures for Microelectronics
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- Edição: Volume 51, Nº 1 (2017)
- Páginas: 100-103
- Seção: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/199350
- DOI: https://doi.org/10.1134/S1063782617010122
- ID: 199350
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Resumo
Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell structures 400–600 μm in length are grown by metal–organic vapor-phase epitaxy on sapphire and silicon substrates. The technology of the titanium-nanolayer-induced ultrafast growth of nanowire and microwire crystals is used. As a current is passed through the microcrystals, an electroluminescence signal is observed in the blue–green spectral region.
Sobre autores
W. Lundin
Ioffe Physical–Technical Institute
Autor responsável pela correspondência
Email: lundin.vpegroup@mail.ioffe.ru
Rússia, St. Petersburg, 194021
S. Rodin
Ioffe Physical–Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Sakharov
Ioffe Physical–Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Rússia, St. Petersburg, 194021
E. Lundina
Ioffe Physical–Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Rússia, St. Petersburg, 194021
S. Usov
Research and Engineering Center of Submicron Heterostructures for Microelectronics
Email: lundin.vpegroup@mail.ioffe.ru
Rússia, St. Petersburg, 194021
Yu. Zadiranov
Ioffe Physical–Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Rússia, St. Petersburg, 194021
S. Troshkov
Ioffe Physical–Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Tsatsulnikov
Research and Engineering Center of Submicron Heterostructures for Microelectronics; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: lundin.vpegroup@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101