On the growth, structure, and surface morphology of epitaxial CdTe films
- 作者: Nuriyev I.1, Mehrabova M.2, Nazarov A.1, Sadigov R.1, Hasanov N.3
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隶属关系:
- Abdullayev Institute of Physics
- Institute of Radiation Problems
- Baku State University
- 期: 卷 51, 编号 1 (2017)
- 页面: 34-37
- 栏目: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/199293
- DOI: https://doi.org/10.1134/S1063782617010183
- ID: 199293
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详细
The structure and surface morphology of epitaxial CdTe films grown on glassy substrates with and without compensation with an additional Te vapor source during growth are studied. The optimal conditions of the production of structurally perfect epitaxial films with a pure smooth surface with no inclusions of another phase (Tso = 1000–1100 K, Tsu = 570–670 K) are determined. It is established that, on glassy substrates, the epitaxial films grow via the (111) plane of the face-centered cubic (fcc) lattice with the parameter a = 6.481 Å. By varying the temperature of the main and compensating sources, CdTe films with n- and p-type conductivity are produced.
作者简介
I. Nuriyev
Abdullayev Institute of Physics
Email: m.mehrabova@science.az
阿塞拜疆, Baku, Az-1143
M. Mehrabova
Institute of Radiation Problems
编辑信件的主要联系方式.
Email: m.mehrabova@science.az
阿塞拜疆, Baku, Az-1143
A. Nazarov
Abdullayev Institute of Physics
Email: m.mehrabova@science.az
阿塞拜疆, Baku, Az-1143
R. Sadigov
Abdullayev Institute of Physics
Email: m.mehrabova@science.az
阿塞拜疆, Baku, Az-1143
N. Hasanov
Baku State University
Email: m.mehrabova@science.az
阿塞拜疆, Baku, Az-1143