The effect of the electron–phonon interaction on reverse currents of GaAs-based p–n junctions
- Авторлар: Zhukov A.1
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Мекемелер:
- Ul’yanovsk State University
- Шығарылым: Том 50, № 13 (2016)
- Беттер: 1734-1737
- Бөлім: Microelectronic Devices and Systems
- URL: https://journals.rcsi.science/1063-7826/article/view/199231
- DOI: https://doi.org/10.1134/S1063782616130145
- ID: 199231
Дәйексөз келтіру
Аннотация
An algorithm for calculating the parameters of the electron–phonon interaction of the EL2 trap has been developed and implemented based on the example of GaAs. Using the obtained parameters, the field dependences of the probabilities of nonradiative transitions from the trap and reverse currents of the GaAs p–n junctions are calculated, which are in good agreement with the experimental data.
Негізгі сөздер
Авторлар туралы
A. Zhukov
Ul’yanovsk State University
Хат алмасуға жауапты Автор.
Email: ZhukovAndreyV@mail.ru
Ресей, Ul’yanovsk, 432017