On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs
- Авторлар: Arutyunyan S.1,2, Pavlov A.1, Pavlov B.1, Tomosh K.1, Fedorov Y.1
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Мекемелер:
- Institute of Ultrahigh Frequency Semiconductor Electronics
- Institute of Microelectronics Technology and High-Purity Materials
- Шығарылым: Том 50, № 8 (2016)
- Беттер: 1117-1121
- Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197748
- DOI: https://doi.org/10.1134/S1063782616080078
- ID: 197748
Дәйексөз келтіру
Аннотация
The fabrication of a two-layer Si3N4/SiO2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si3N4/SiO2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.
Авторлар туралы
S. Arutyunyan
Institute of Ultrahigh Frequency Semiconductor Electronics; Institute of Microelectronics Technology and High-Purity Materials
Хат алмасуға жауапты Автор.
Email: spartakmain@gmail.com
Ресей, Moscow, 117105; Institutskaya ul. 6, Chernogolovka, Moscow oblast, 142432
A. Pavlov
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: spartakmain@gmail.com
Ресей, Moscow, 117105
B. Pavlov
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: spartakmain@gmail.com
Ресей, Moscow, 117105
K. Tomosh
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: spartakmain@gmail.com
Ресей, Moscow, 117105
Yu. Fedorov
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: spartakmain@gmail.com
Ресей, Moscow, 117105