Russian Microelectronics
ISSN 1063-7397 (Print)
ISSN 1608-3415 (Online)
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Keywords
ADC
DAC
GaAs
MIS varicap
RUSSIAN Microelectronics
atomic force microscopy
compaction in a magnetic field
ferroelectrics
gallium arsenide
gallium nitride
heterostructure
heterostructures
interface
leakage current
magnetic texture
phase shifter
porous silicon
recrystallization
silicon carbide
varicap
zirconia
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Keywords
ADC
DAC
GaAs
MIS varicap
RUSSIAN Microelectronics
atomic force microscopy
compaction in a magnetic field
ferroelectrics
gallium arsenide
gallium nitride
heterostructure
heterostructures
interface
leakage current
magnetic texture
phase shifter
porous silicon
recrystallization
silicon carbide
varicap
zirconia
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Author Details
Author Details
Murin, D.
Issue
Section
Title
File
Vol 45, No 5 (2016)
Article
Kinetics of the interaction between a CCl
2
F
2
radio-frequency discharge and gallium arsenide
Vol 46, No 4 (2017)
Article
Copper etching kinetics in a high-frequency discharge of freon R12
Vol 47, No 2 (2018)
Article
Electrophysical Parameters and Radiation Spectra of Boron Trichloride Plasma
Vol 47, No 4 (2018)
Article
Structuring Copper in the Plasma Medium of a High-Frequency Discharge
Vol 47, No 4 (2018)
Article
On the Effect of the Ratio of Concentrations of Fluorocarbon Components in a CF
4
+ C
4
F
8
+ Ar Mixture on the Parameters of Plasma and SiO
2
/Si Etching Selectivity
Vol 47, No 6 (2018)
Article
Parameters of Plasma and Kinetics of Active Particles in CF
4
(CHF
3
) + Ar Mixtures of a Variable Initial Composition
Vol 47, No 6 (2018)
Article
Etching of GaAs in the Plasma of a Freon R-12–Argon (CCl
2
F
2
/Ar) Mixture
Vol 48, No 2 (2019)
Article
Features of the Kinetics of Bulk and Heterogeneous Processes in CHF
3
+ Ar and C
4
F
8
+ Ar Plasma Mixtures
Vol 48, No 6 (2019)
Article
Parameters of Plasma and Way of Etching Silicon in a CF
4
+ CHF
3
+ O
2
Mixture
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