| Issue |
Title |
File |
| Vol 48, No 1 (2019) |
Magnetooptical Response of Metallized Nanostructural Arrays with a Complex Relief on the Surface of Silicon Wafers |
(Eng)
|
|
Paporkov V.A., Prokaznikov A.V.
|
| Vol 47, No 8 (2018) |
Low Dose Rate Effects in Silicon-Based Devices and Integrated Circuits: A Review |
(Eng)
|
|
Tapero K.I.
|
| Vol 47, No 8 (2018) |
Polysilicon Market Development and Production Technologies |
(Eng)
|
|
Mitin V.V., Kokh A.A.
|
| Vol 47, No 8 (2018) |
Studying Phase Equilibria in the Zn–Se–Fe Ternary System for Laser Applications |
(Eng)
|
|
Zykova M.P., Krolevetskaya V.Y., Mozhevitina E.N., Gavrishchuk E.M., Avetistov I.K.
|
| Vol 47, No 8 (2018) |
Study of the Plastic Formation in the Production of Thermoelectric Material Based on Bismuth Telluride |
(Eng)
|
|
Bogomolov D.I., Bublik V.T., Verezub N.A., Prostomolotov A.I., Tabachkova N.Y.
|
| Vol 47, No 8 (2018) |
Methods for Studying Materials and Structures in Electronics as Applied to the Development of Medicinal Endoprostheses of Titanium with Enhanced Fibroinegration Efficiency |
(Eng)
|
|
Malinkovich M.D., Cherkesov I.V., Temirov A.A., Molchanov S.A., Shaikhaliev A.I., Polisan A.A., Ivanov S.Y., Kiselev D.A., Parkhomenko Y.N.
|
| Vol 47, No 8 (2018) |
Optimization Problems of Nanosized Semiconductor Heterostructures |
(Eng)
|
|
Abgaryan K.K.
|
| Vol 47, No 8 (2018) |
Electromagnetic and Mechanical Properties of the Nanocomposites of Polyacrylonitrile/Carbon Nanotubes |
(Eng)
|
|
Kozhitov L.V., Shadrinov A.V., Muratov D.G., Korovin E.Y., Popkova A.V.
|
| Vol 47, No 8 (2018) |
Dislocation Structure of Epitaxial Layers of AlGaN/GaN/α-Al2O3 Heterostructures Containing a GaN Layer Doped with Carbon and Iron |
(Eng)
|
|
Rusak T.F., Enisherlova K.L., Lutzau A.V., Saraykin V.V., Korneev V.I.
|
| Vol 47, No 8 (2018) |
Formation of Charge Pumps in the Structure of Photoelectric Converters |
(Eng)
|
|
Starkov V.V., Gusev V.A., Kulakovskaya N.O., Gosteva E.A., Parkhomenko Y.N.
|
| Vol 47, No 8 (2018) |
Experimental Support of the Magnetron Nickel Oxide Cathode Fabrication Process |
(Eng)
|
|
Kuchina I.Y., Polushin N.I., Zakharova E.S., Li I.P., Petrov V.S., Kapustin V.I., Ledentsova N.E.
|
| Vol 47, No 8 (2018) |
Modeling the Energy Structure of a GaN p–i–n Junction |
(Eng)
|
|
Manyakhin F.I., Mokretsova L.O.
|
| Vol 47, No 8 (2018) |
On the Nature of the Effective Surface Charge Transformation on InAs Crystals during Anodic Oxide Layer Growth |
(Eng)
|
|
Artamonov A.V., Astakhov V.P., Warlashov I.B., Gindin P.D., Evstafieva N.I., Mitasov P.V., Miroshnikova I.N.
|
| Vol 47, No 7 (2018) |
Using a TCAD System to Develop a Manufacturing Route for Complimentary Bipolar Transistors as Part of OD Devices |
(Eng)
|
|
Solov’ev A.V., Krupkina T.U., Lagun A.M.
|
| Vol 47, No 7 (2018) |
Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors |
(Eng)
|
|
Hrapov M.O., Gluhov A.V., Gridchin V.A., Kalinin S.V.
|
| Vol 47, No 7 (2018) |
Calculation of the Influence of Shunt Parameters on the dV/dt Effect in Power Photothyristors |
(Eng)
|
|
Silkin D.S., Paderov V.P.
|
| Vol 47, No 7 (2018) |
An Integrated High-Capacitance Varicap Based on Porous Silicon |
(Eng)
|
|
Timoshenkov S.P., Boyko A.N., Gaev D.S., Kalmykov R.M.
|
| Vol 47, No 7 (2018) |
Structural Strength and Temperature Condition of Multi-Chip Modules |
(Eng)
|
|
Pogalov A.I., Blinov G.A., Chugunov E.Y.
|
| Vol 47, No 7 (2018) |
Copper-Containing Compositions Based on Alicyclic Polyimide for Microelectronic Applications |
(Eng)
|
|
Kravtsova V., Umerzakova M., Korobova N., Vertyanov D.
|
| Vol 47, No 7 (2018) |
Mechanism for Forming Quantum-Size AlGaN/GaN/InGaN/GaN Heterostructure Layers |
(Eng)
|
|
Vigdorovich E.N.
|
| Vol 47, No 7 (2018) |
The Influence of the Dopant Concentration in a Silicon Film on the Magnetic Sensitivity of SOI Field-Effect Hall Sensors |
(Eng)
|
|
Korolev M., Kozlov A., Krasukov A., Devlikanova S.
|
| Vol 47, No 7 (2018) |
TCAD Simulation of Dose Radiation Effects in Sub-100-nm High-κ MOS Transistor Structures |
(Eng)
|
|
Petrosyants K.O., Popov D.A., Bykov D.V.
|
| Vol 47, No 7 (2018) |
Thermoelectric Model of the InGaN/GaN Light Emission Diode with Allowance for the Substrate Heterostructure Effect |
(Eng)
|
|
Sergeev V.A., Hodakov A.M.
|
| Vol 47, No 7 (2018) |
Influence of External Microwave Fields on the Characteristics of a Square-Pulse RC-Generator |
(Eng)
|
|
Usanov D.A., Merdanov M.K., Skripal A.V., Zotov R.V., Korotin B.N., Ponomarev D.V.
|
| Vol 47, No 7 (2018) |
Influence of the Parameters of Schottky Barriers of AlGaN/GaN/SiC HEMT Transistors on the Phase Noise of Microwave Generators |
(Eng)
|
|
Gruzdov V.V., Enisherlova K.L., Kolkovsky Y.V., Davydov N.V., Kapilin S.A.
|
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