| Шығарылым |
Атауы |
Файл |
| Том 48, № 1 (2019) |
Magnetooptical Response of Metallized Nanostructural Arrays with a Complex Relief on the Surface of Silicon Wafers |
(Eng)
|
|
Paporkov V., Prokaznikov A.
|
| Том 47, № 8 (2018) |
Low Dose Rate Effects in Silicon-Based Devices and Integrated Circuits: A Review |
(Eng)
|
|
Tapero K.
|
| Том 47, № 8 (2018) |
Polysilicon Market Development and Production Technologies |
(Eng)
|
|
Mitin V., Kokh A.
|
| Том 47, № 8 (2018) |
Studying Phase Equilibria in the Zn–Se–Fe Ternary System for Laser Applications |
(Eng)
|
|
Zykova M., Krolevetskaya V., Mozhevitina E., Gavrishchuk E., Avetistov I.
|
| Том 47, № 8 (2018) |
Study of the Plastic Formation in the Production of Thermoelectric Material Based on Bismuth Telluride |
(Eng)
|
|
Bogomolov D., Bublik V., Verezub N., Prostomolotov A., Tabachkova N.
|
| Том 47, № 8 (2018) |
Methods for Studying Materials and Structures in Electronics as Applied to the Development of Medicinal Endoprostheses of Titanium with Enhanced Fibroinegration Efficiency |
(Eng)
|
|
Malinkovich M., Cherkesov I., Temirov A., Molchanov S., Shaikhaliev A., Polisan A., Ivanov S., Kiselev D., Parkhomenko Y.
|
| Том 47, № 8 (2018) |
Optimization Problems of Nanosized Semiconductor Heterostructures |
(Eng)
|
|
Abgaryan K.
|
| Том 47, № 8 (2018) |
Electromagnetic and Mechanical Properties of the Nanocomposites of Polyacrylonitrile/Carbon Nanotubes |
(Eng)
|
|
Kozhitov L., Shadrinov A., Muratov D., Korovin E., Popkova A.
|
| Том 47, № 8 (2018) |
Dislocation Structure of Epitaxial Layers of AlGaN/GaN/α-Al2O3 Heterostructures Containing a GaN Layer Doped with Carbon and Iron |
(Eng)
|
|
Rusak T., Enisherlova K., Lutzau A., Saraykin V., Korneev V.
|
| Том 47, № 8 (2018) |
Formation of Charge Pumps in the Structure of Photoelectric Converters |
(Eng)
|
|
Starkov V., Gusev V., Kulakovskaya N., Gosteva E., Parkhomenko Y.
|
| Том 47, № 8 (2018) |
Experimental Support of the Magnetron Nickel Oxide Cathode Fabrication Process |
(Eng)
|
|
Kuchina I., Polushin N., Zakharova E., Li I., Petrov V., Kapustin V., Ledentsova N.
|
| Том 47, № 8 (2018) |
Modeling the Energy Structure of a GaN p–i–n Junction |
(Eng)
|
|
Manyakhin F., Mokretsova L.
|
| Том 47, № 8 (2018) |
On the Nature of the Effective Surface Charge Transformation on InAs Crystals during Anodic Oxide Layer Growth |
(Eng)
|
|
Artamonov A., Astakhov V., Warlashov I., Gindin P., Evstafieva N., Mitasov P., Miroshnikova I.
|
| Том 47, № 7 (2018) |
Using a TCAD System to Develop a Manufacturing Route for Complimentary Bipolar Transistors as Part of OD Devices |
(Eng)
|
|
Solov’ev A., Krupkina T., Lagun A.
|
| Том 47, № 7 (2018) |
Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors |
(Eng)
|
|
Hrapov M., Gluhov A., Gridchin V., Kalinin S.
|
| Том 47, № 7 (2018) |
Calculation of the Influence of Shunt Parameters on the dV/dt Effect in Power Photothyristors |
(Eng)
|
|
Silkin D., Paderov V.
|
| Том 47, № 7 (2018) |
An Integrated High-Capacitance Varicap Based on Porous Silicon |
(Eng)
|
|
Timoshenkov S., Boyko A., Gaev D., Kalmykov R.
|
| Том 47, № 7 (2018) |
Structural Strength and Temperature Condition of Multi-Chip Modules |
(Eng)
|
|
Pogalov A., Blinov G., Chugunov E.
|
| Том 47, № 7 (2018) |
Copper-Containing Compositions Based on Alicyclic Polyimide for Microelectronic Applications |
(Eng)
|
|
Kravtsova V., Umerzakova M., Korobova N., Vertyanov D.
|
| Том 47, № 7 (2018) |
Mechanism for Forming Quantum-Size AlGaN/GaN/InGaN/GaN Heterostructure Layers |
(Eng)
|
|
Vigdorovich E.
|
| Том 47, № 7 (2018) |
The Influence of the Dopant Concentration in a Silicon Film on the Magnetic Sensitivity of SOI Field-Effect Hall Sensors |
(Eng)
|
|
Korolev M., Kozlov A., Krasukov A., Devlikanova S.
|
| Том 47, № 7 (2018) |
TCAD Simulation of Dose Radiation Effects in Sub-100-nm High-κ MOS Transistor Structures |
(Eng)
|
|
Petrosyants K., Popov D., Bykov D.
|
| Том 47, № 7 (2018) |
Thermoelectric Model of the InGaN/GaN Light Emission Diode with Allowance for the Substrate Heterostructure Effect |
(Eng)
|
|
Sergeev V., Hodakov A.
|
| Том 47, № 7 (2018) |
Influence of External Microwave Fields on the Characteristics of a Square-Pulse RC-Generator |
(Eng)
|
|
Usanov D., Merdanov M., Skripal A., Zotov R., Korotin B., Ponomarev D.
|
| Том 47, № 7 (2018) |
Influence of the Parameters of Schottky Barriers of AlGaN/GaN/SiC HEMT Transistors on the Phase Noise of Microwave Generators |
(Eng)
|
|
Gruzdov V., Enisherlova K., Kolkovsky Y., Davydov N., Kapilin S.
|
| Нәтижелер 328 - 76/100 |
<< < 1 2 3 4 5 6 7 8 9 10 > >>
|
