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On the Effect of the Crystal Structure in the Sputtering of Two-Component Single-Crystal Structures
Samoilov V.N., Ananieva N.G.
Effective sputtering yields of titanium, titanium nitride, and molybdenum induced by nitrogen ions and ions of nitrogen-oxygen mixtures
Dukhopel’nikov D.V., Riazanov V.A., Vorob’ev E.V., Abgarian V.K., Popov G.A., Khartov S.A.
A Comment on the Computer Simulation Program SRIM
Shulga V.I.
Simulation of the interaction of free Cu–Bi clusters with low-energy single atoms and clusters of argon
Shyrokorad D.V., Kornich G.V., Buga S.G.
Analysis of the Results of Silicon Sputtering Simulation as Functions of Different Ar–Si Potentials
Sycheva A.A., Voronina E.N., Palov A.P.
Structure Changes in Carbon Films Prepared by Electron-Beam-Assisted Deposition
Korshunov S.N., Lebedev A.M., Martynenko Y.V., Svechnikov N.Y., Skorlupkin I.D.
Molecular Dynamics Simulation of Physical Sputtering of Nanoporous Silicon-Based Materials with Low Energy Argon
Sycheva A.A., Voronina E.N., Rakhimova T.V.
Excitation Energies of VnOm+ and NbnOm+ Clusters Sputtered under Ion Bombardment
Dzhemilev N.K., Kovalenko S.F., Maksimov S.E., Tukfatullin O.F., Khojiev S.T.
Modeling of the glow discharge cathode sheath and the cathode surface sputtering in a mixture of argon with mercury vapor
Dubinina M.S., Savichkin D.O., Fisher M.R., Kristya V.I.
Low energy selective etching of metal films in oxygen-containing high-density argon plasma
Amirov I.I., Izyumov M.O., Naumov V.V.
Effect of Ion Bombardment on the Density of States of Valence Electrons in CdS Films
Umirzakov B.E., Tashmukhamedova D.A., Rabbimov E.M., Sodikjanov J.S., Urokov A.N.
Aperiodic Mirrors Based on Multilayer Beryllium Systems
Garakhin S.A., Zuev S.Y., Pleshkov R.S., Polkovnikov V.N., Salashchenko N.N., Chkhalo N.I.
Obtainment of Stabilized Zirconium Dioxide via the High-Frequency Magnetron Sputtering of a Metallic Target
Valyukhov S.G., Stognei O.V., Filatov M.S.
Principles of the Construction and Computer Simulation of a Source of Homogeneous and Heterogeneous Cluster Ions
Belykh S.F., Bekkerman A.D., Tolstogouzov A.B., Lozovan A.A., Fu D.J.
Pulsed magnetron sputtering and ion-induced annealing of carbon films
Shevchenko E.F., Sysoev I.A., Prucnal S., Frenzel K.
The effect of silicon-substrate orientation on the local piezoelectric characteristics of LiNbO3 films
Kiselev D.A., Zhukov R.N., Ksenich S.V., Kubasov I.V., Temirov A.A., Timushkin N.G., Bykov A.S., Malinkovich M.D., Shvartsman V.V., Lupascu D.C., Parkhomenko Y.N.
Application of Ion-Beam Treatment in the Process of the Magnetron Deposition of Thin SnO2 Films
Alalykin A.S., Krylov P.N., Zakirova R.M., Fedotova I.V., Kostenkov N.V., Durman E.A.
Sputtering of Silicon Single Crystals under Irradiation with a Helium and Argon Ion Beam with an Average Energy of 1 keV
Volkov N.V., Safonov D.A.
Emission Theory of Amorphous Material Sputtering: the Dependence of the Sputtering Coefficient on the Angle of Primary Ion Beam Incidence
Pustovit A.N.
Synergetics of surface sputtering by polyatomic ions
Oksengendler B.L., Maksimov S.E., Nikiforov V.N., Turaev N.Y.
On enhancing the thermal stability of metal hydrides by ion–plasma vacuum magnetron sputtering
Pavlenko V.I., Cherkashina N.I., Yastrebinsky R.N., Demchenko O.V.
Depth of origin of sputtered particles under the oblique incidence of a primary ion beam
Pustovit A.N.
On the Change in the Reflectance of Мо(111) Mirrors after Exposure to D2–N2 Plasma
Gorodetsky A.E., Bukhovets V.L., Markin A.V., Voytitsky V.L., Rybkina T.V., Zalavutdinov R.K., Zakharov A.P., Zolotarevsky V.I., Arkhipushkin I.A., Kazansky L.P.
Internal Stresses in Mo/Y Multilayer Mirrors
Kvashennikov D.S., Vainer Y.A., Zuev S.Y., Polkovnikov V.N.
Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film
Tashmukhamedova D.A., Yusupjanova M.B., Tashatov A.K., Umirzakov B.E.
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