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Іздеу

Шығарылым
Атауы
Авторлар
Том 13, № 6 (2019)
Dependence of the Kinetics of Radiation-Induced Defect Formation on the Energy Absorbed by Si and SiC when Exposed to Fast Charged Particles
Kozlovski V., Vasil’ev A., Emtsev V., Oganesyan G., Lebedev A.
PDF
(Eng)
Том 11, № 5 (2017)
Evolution of surface morphology during the growth of amorphous and polycrystalline silicon films
Novak A., Novak V., Smirnov D.
PDF
(Eng)
Том 10, № 4 (2016)
Effect of recoil atoms on radiation-defect formation in semiconductors under 1–10-MeV proton irradiation
Kozlovski V., Vasil’ev A., Lebedev A.
PDF
(Eng)
Том 13, № 2 (2019)
Study of the Processes of Mesoporous-Silicon Carbonization
Gusev A., Kargin N., Ryndya S., Safaraliev G., Siglovaya N., Sultanov A., Timofeev A.
PDF
(Eng)
Том 13, № 2 (2019)
PLD Grown SiC Thin Films on Al2O3: Morphology and Structure
Kargin N., Gusev A., Ryndya S., Timofeev A., Grekhov M., Siglovaya N., Antonenko S.
PDF
(Eng)
Том 12, № 2 (2018)
Influence of the Crystallographic Orientation of a Substrate on the Nucleation, Shape, and Evolution of Silicon Pores during its Electrochemical Etching in Hydrofluoric-Acid Solutions
Abramova E., Syrov Y., Khort A., Yakovenko A., Prokhorov D.
PDF
(Eng)
Том 11, № 1 (2017)
On the formation of arrays of single-crystal silicon islands with small angular dispersion
Markelov A., Trushin V., Chuprunov E., Gribko V., Kotomina V., Antonov I., Veselova L.
PDF
(Eng)
Том 13, № 2 (2019)
Sputtering of Silicon Single Crystals under Irradiation with a Helium and Argon Ion Beam with an Average Energy of 1 keV
Volkov N., Safonov D.
PDF
(Eng)
Том 11, № 6 (2017)
Formation of Films of Tungsten and its Oxides in a High-Frequency Capacitive Discharge in a D2-O2 Mixture
Gorodetsky A., Zalavutdinov R., Bukhovets V., Markin A., Zakharov A., Zolotarevsky V., Voytitsky V., Rybkina T., Kazansky L., Arkhipushkin I., Mukhin E., Razdobarin A.
PDF
(Eng)
Том 11, № 1 (2017)
Study of the features of BaF2 heteroepitaxy on CaF2/Si(100) layers obtained in the high-temperature growth mode
Filimonova N., Ilyushin V., Velichko A.
PDF
(Eng)
Том 13, № 6 (2019)
Features of Degradation of the Optical Properties of Hollow Particles TiO2, ZnO, and SiO2 under the Influence of Ionizing Radiations
Neshchimenko V., Mikhailov M.
PDF
(Eng)
Том 13, № 1 (2019)
Role of the Carbon Sublattice in n-SiС Conductivity Compensation
Kozlovski V., Vasil’ev A., Davidovskaya K., Lebedev A.
PDF
(Eng)
Том 11, № 5 (2017)
Profile, morphology and surface elemental composition of through micro-holes in silicon wafers
Zhukov A., Zabotin Y., Podgorodetsky S., Anurov A.
PDF
(Eng)
Том 11, № 1 (2017)
Investigation of stacking faults introduced into 4H-SiC crystals by indentation
Orlov V., Yakimov E.
PDF
(Eng)
Том 12, № 6 (2018)
Structure and Phase Composition of Multilayer AlN/SiN Films Irradiated with Helium Ions
Uglov V., Shymanski V., Korenevski E., Remnev G., Kvasov N.
PDF
(Eng)
Том 10, № 5 (2016)
Analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF2/Si/CaF2 structures
Velichko A., Ilyushin V., Krupin A., Gavrilenko V., Filimonova N.
PDF
(Eng)
Том 13, № 4 (2019)
Computer Analysis of AFM Images of a Silicon Surface Implanted with Zinc Ions and Oxidized at Elevated Temperatures
Sokolov V., Razgulina O., Privezentsev V., Ksenich S.
PDF
(Eng)
Том 12, № 5 (2018)
Influence of a Carbon-Modified Surface on the Field-Emission Properties of Silicon Crystals
Yafarov R., Smirnov A., Yafarov A.
PDF
(Eng)
Том 11, № 5 (2017)
Radiation resistance of 4H-SiC Schottky diodes under irradiation with 0.9-MeV electrons
Lebedev A., Davydovskaya K., Strelchuk A., Kozlovski V.
PDF
(Eng)
Том 10, № 4 (2016)
Kinetics of the formation of pores and a change in the properties of materials in numerical models
Zmievskaya G., Bondareva A.
PDF
(Eng)
Том 13, № 3 (2019)
Preparation, Structure, and Mechanical Properties of a Mo–Si–B Layered Composite
Kiiko V., Korzhov V.
PDF
(Eng)
Том 12, № 5 (2018)
Modification of Zinc-Implanted Silicon by Swift Xenon Ion Irradiation
Privezentsev V., Skuratov V., Kulikauskas V., Makunin A., Ksenich S., Steinman E., Tereshchenko A., Goryachev A.
PDF
(Eng)
Том 11, № 4 (2017)
Molecular dynamics simulation of the penetration of silicon by hypersonic waves generated in native silicon oxide under irradiation
Stepanov A., Tetelbaum D.
PDF
(Eng)
Том 12, № 4 (2018)
Investigation of the Morphology and Structure of Porous Hybrid 3D Scaffolds Based on Polycaprolactone Involving Silicate-Containing Hydroxyapatite
Gorodzha S., Surmeneva M., Selezneva I., Ermakov A., Zaitsev V., Surmenev R.
PDF
(Eng)
Том 11, № 3 (2017)
Influence of annealing temperature and its atmosphere on the properties of zinc implanted silicon
Privezentsev V., Kulikauskas V., Zatekin V., Shcherbachev K., Tabachkova N., Eidelman K., Ksenich S., Batrakov A.
PDF
(Eng)
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