The effect of silicon-substrate orientation on the local piezoelectric characteristics of LiNbO3 films
- Authors: Kiselev D.A.1, Zhukov R.N.1, Ksenich S.V.1, Kubasov I.V.1, Temirov A.A.1, Timushkin N.G.1, Bykov A.S.1, Malinkovich M.D.1, Shvartsman V.V.2, Lupascu D.C.2, Parkhomenko Y.N.1
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Affiliations:
- National Research Technological University “MISiS”
- Universität Duisburg-Essen
- Issue: Vol 10, No 4 (2016)
- Pages: 742-747
- Section: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/189242
- DOI: https://doi.org/10.1134/S1027451016040091
- ID: 189242
Cite item
Abstract
The domain structure of lithium-niobate thin films grown on Si(111) and Si(100) substrates coated with a native oxide layer with a thickness of no less than 2 nm is investigated by X-ray diffraction, scanning electron microscopy and piezoresponse force microscopy. The films are synthesized by the rf magnetron sputtering of a single-crystal lithium-niobate target. A high degree of grain orientation in the polycrystalline films is demonstrated. The piezoelectric coefficients dzz of the lithium-niobate films on Si(111) and Si(100) substrates are calculated from the measured dependences of the amplitude of the piezoresponse signal on the ac voltage applied between the cantilever tip and the substrate. Piezoelectric hysteresis loops are obtained in the remanent piezoelectric response regime
About the authors
D. A. Kiselev
National Research Technological University “MISiS”
Author for correspondence.
Email: dm.kiselev@misis.ru
Russian Federation, Moscow, 119049
R. N. Zhukov
National Research Technological University “MISiS”
Email: dm.kiselev@misis.ru
Russian Federation, Moscow, 119049
S. V. Ksenich
National Research Technological University “MISiS”
Email: dm.kiselev@misis.ru
Russian Federation, Moscow, 119049
I. V. Kubasov
National Research Technological University “MISiS”
Email: dm.kiselev@misis.ru
Russian Federation, Moscow, 119049
A. A. Temirov
National Research Technological University “MISiS”
Email: dm.kiselev@misis.ru
Russian Federation, Moscow, 119049
N. G. Timushkin
National Research Technological University “MISiS”
Email: dm.kiselev@misis.ru
Russian Federation, Moscow, 119049
A. S. Bykov
National Research Technological University “MISiS”
Email: dm.kiselev@misis.ru
Russian Federation, Moscow, 119049
M. D. Malinkovich
National Research Technological University “MISiS”
Email: dm.kiselev@misis.ru
Russian Federation, Moscow, 119049
V. V. Shvartsman
Universität Duisburg-Essen
Email: dm.kiselev@misis.ru
Germany, Essen, 45141
D. C. Lupascu
Universität Duisburg-Essen
Email: dm.kiselev@misis.ru
Germany, Essen, 45141
Yu. N. Parkhomenko
National Research Technological University “MISiS”
Email: dm.kiselev@misis.ru
Russian Federation, Moscow, 119049
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