Emission Theory of Amorphous Material Sputtering: the Dependence of the Sputtering Coefficient on the Angle of Primary Ion Beam Incidence


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The dependences of the sputtering coefficient on the types of accelerated ions, their energy, and the angle of incidence on a target are calculated. For Ar–Si, Хе–С, and H–W systems, acceptable coincidence between the calculated and experimental data is obtained. Two mechanisms for secondary-particle ejection from solids are established; they determine the dependences of the base sputtering coefficient for the base on the energy and the angle of primary ion incidence on the target.

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A. Pustovit

Institute of Microelectronic Technology and High-Purity Materials

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Email: pustan@ipmt-hpm.ac.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432

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