Effect of Ion Bombardment on the Density of States of Valence Electrons in CdS Films
- Autores: Umirzakov B.1, Tashmukhamedova D.1, Rabbimov E.2, Sodikjanov J.1, Urokov A.1
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Afiliações:
- Tashkent State Technical University Named after Islam Karimov
- Jizzakh Polytechnical Institute
- Edição: Volume 13, Nº 6 (2019)
- Páginas: 1248-1251
- Seção: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/196567
- DOI: https://doi.org/10.1134/S1027451019060557
- ID: 196567
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Resumo
Cd nanofilms with a thickness of 10–12 Å are obtained by bombarding a CdS surface with Ar+ ions. The obtained Cd–CdS nanofilm systems are shown to be promising for creating metal–insulator–semiconductor and semiconductor–insulator–semiconductor heterostructures and forming nanoscale barrier layers and hyperfine ohmic contacts on the semiconductor surface.
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Sobre autores
B. Umirzakov
Tashkent State Technical University Named after Islam Karimov
Autor responsável pela correspondência
Email: ftmet@rambler.ru
Uzbequistão, Tashkent, 100095
D. Tashmukhamedova
Tashkent State Technical University Named after Islam Karimov
Autor responsável pela correspondência
Email: ftmet@mail.ru
Uzbequistão, Tashkent, 100095
E. Rabbimov
Jizzakh Polytechnical Institute
Email: ftmet@mail.ru
Uzbequistão, Jizzakh, 130100
J. Sodikjanov
Tashkent State Technical University Named after Islam Karimov
Email: ftmet@mail.ru
Uzbequistão, Tashkent, 100095
A. Urokov
Tashkent State Technical University Named after Islam Karimov
Email: ftmet@mail.ru
Uzbequistão, Tashkent, 100095