Effect of Ion Bombardment on the Density of States of Valence Electrons in CdS Films
- Authors: Umirzakov B.E.1, Tashmukhamedova D.A.1, Rabbimov E.M.2, Sodikjanov J.S.1, Urokov A.N.1
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Affiliations:
- Tashkent State Technical University Named after Islam Karimov
- Jizzakh Polytechnical Institute
- Issue: Vol 13, No 6 (2019)
- Pages: 1248-1251
- Section: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/196567
- DOI: https://doi.org/10.1134/S1027451019060557
- ID: 196567
Cite item
Abstract
Cd nanofilms with a thickness of 10–12 Å are obtained by bombarding a CdS surface with Ar+ ions. The obtained Cd–CdS nanofilm systems are shown to be promising for creating metal–insulator–semiconductor and semiconductor–insulator–semiconductor heterostructures and forming nanoscale barrier layers and hyperfine ohmic contacts on the semiconductor surface.
About the authors
B. E. Umirzakov
Tashkent State Technical University Named after Islam Karimov
Author for correspondence.
Email: ftmet@rambler.ru
Uzbekistan, Tashkent, 100095
D. A. Tashmukhamedova
Tashkent State Technical University Named after Islam Karimov
Author for correspondence.
Email: ftmet@mail.ru
Uzbekistan, Tashkent, 100095
E. M. Rabbimov
Jizzakh Polytechnical Institute
Email: ftmet@mail.ru
Uzbekistan, Jizzakh, 130100
J. Sh. Sodikjanov
Tashkent State Technical University Named after Islam Karimov
Email: ftmet@mail.ru
Uzbekistan, Tashkent, 100095
A. N. Urokov
Tashkent State Technical University Named after Islam Karimov
Email: ftmet@mail.ru
Uzbekistan, Tashkent, 100095
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