TERNARY MEMORY CELLS BASED ON PERFORATED MAGNETIC FILMS

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Abstract

The paper studies ferromagnetic films with strong uniaxial anisotropy of the “easy plane” type and substantiates that paired nano-sized perforations in such films can be used as memory cells for recording and storing data in the ternary number system. The problem of reading the state of cells of this type has been examined, and an approach to solving it has been proposed, which consists in measuring the response of the system to a picosecond pulse of an external magnetic field. The parameters of the system at which the magnitude of this response is greatest were obtained, and estimates of this value were made using both analytical and numerical methods.

About the authors

E. B Magadeev

Ufa University of Science and Technology

Email: magadeeveb@gmail.com
Ufa, Russia

R. M Vakhitov

Ufa University of Science and Technology

Email: vakhitovrm@yahoo.com
Ufa, Russia

R. R Kanbekov

Ufa University of Science and Technology

Ufa, Russia

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