Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range
- 作者: Voitsekhovskii A.1, Kulchitsky N.2, Nesmelov S.1, Dzyadukh S.1
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隶属关系:
- National Research Tomsk State University
- Russian Technological University (MIREA)
- 期: 卷 63, 编号 9 (2018)
- 页面: 1112-1118
- 栏目: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/200205
- DOI: https://doi.org/10.1134/S1064226918090231
- ID: 200205
如何引用文章
详细
Features of the electrical properties of n(p)-Hg1–xCdxTe (x = 0.21–0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013) and Si(013) substrates. The possibility of determining the basic parameters of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) with and without a varizonal layer from admittance measurements in a wide range of temperatures and frequencies is discussed.
作者简介
A. Voitsekhovskii
National Research Tomsk State University
编辑信件的主要联系方式.
Email: vav43@mail.tsu.ru
俄罗斯联邦, Tomsk, 634050
N. Kulchitsky
Russian Technological University (MIREA)
Email: vav43@mail.tsu.ru
俄罗斯联邦, Moscow, 119454
S. Nesmelov
National Research Tomsk State University
Email: vav43@mail.tsu.ru
俄罗斯联邦, Tomsk, 634050
S. Dzyadukh
National Research Tomsk State University
Email: vav43@mail.tsu.ru
俄罗斯联邦, Tomsk, 634050