Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range
- Autores: Voitsekhovskii A.1, Kulchitsky N.2, Nesmelov S.1, Dzyadukh S.1
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Afiliações:
- National Research Tomsk State University
- Russian Technological University (MIREA)
- Edição: Volume 63, Nº 9 (2018)
- Páginas: 1112-1118
- Seção: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/200205
- DOI: https://doi.org/10.1134/S1064226918090231
- ID: 200205
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Resumo
Features of the electrical properties of n(p)-Hg1–xCdxTe (x = 0.21–0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013) and Si(013) substrates. The possibility of determining the basic parameters of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) with and without a varizonal layer from admittance measurements in a wide range of temperatures and frequencies is discussed.
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Sobre autores
A. Voitsekhovskii
National Research Tomsk State University
Autor responsável pela correspondência
Email: vav43@mail.tsu.ru
Rússia, Tomsk, 634050
N. Kulchitsky
Russian Technological University (MIREA)
Email: vav43@mail.tsu.ru
Rússia, Moscow, 119454
S. Nesmelov
National Research Tomsk State University
Email: vav43@mail.tsu.ru
Rússia, Tomsk, 634050
S. Dzyadukh
National Research Tomsk State University
Email: vav43@mail.tsu.ru
Rússia, Tomsk, 634050