Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range

Аннотация

Features of the electrical properties of n(p)-Hg_1–xCd_xTe (x = 0.21–0.23) with Al₂O₃ or SiO₂/Si₃N₄ dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013) and Si(013) substrates. The possibility of determining the basic parameters of MIS structures based on n(p)-Hg_1–xCd_xTe (x = 0.21–0.23) with and without a varizonal layer from admittance measurements in a wide range of temperatures and frequencies is discussed.