Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range
- Авторлар: Voitsekhovskii A.1, Kulchitsky N.2, Nesmelov S.1, Dzyadukh S.1
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Мекемелер:
- National Research Tomsk State University
- Russian Technological University (MIREA)
- Шығарылым: Том 63, № 9 (2018)
- Беттер: 1112-1118
- Бөлім: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/200205
- DOI: https://doi.org/10.1134/S1064226918090231
- ID: 200205
Дәйексөз келтіру
Аннотация
Features of the electrical properties of n(p)-Hg1–xCdxTe (x = 0.21–0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013) and Si(013) substrates. The possibility of determining the basic parameters of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) with and without a varizonal layer from admittance measurements in a wide range of temperatures and frequencies is discussed.
Негізгі сөздер
Авторлар туралы
A. Voitsekhovskii
National Research Tomsk State University
Хат алмасуға жауапты Автор.
Email: vav43@mail.tsu.ru
Ресей, Tomsk, 634050
N. Kulchitsky
Russian Technological University (MIREA)
Email: vav43@mail.tsu.ru
Ресей, Moscow, 119454
S. Nesmelov
National Research Tomsk State University
Email: vav43@mail.tsu.ru
Ресей, Tomsk, 634050
S. Dzyadukh
National Research Tomsk State University
Email: vav43@mail.tsu.ru
Ресей, Tomsk, 634050