Methods for Calculation and Control of the Impurity Difference Dose in Avalanche InGaAs/InP Structures

Resumo

Methods for calculation and control of impurity difference dose Q_а during the planar procedure of fabrication of avalanche photodiodes (APDs) based on heteroepitaxial InGaAs/InP structures are presented. The developed methods for the difference dose control in avalanche InGaAs/InP structures have been used at various stages of APD fabrication. It has been demonstrated that a tighter impurity dose control from the manufacturer of epitaxial structures, coordination of dose measurement procedures, and correction of diffusion processes for specific impurity doses are needed.