Methods for Calculation and Control of the Impurity Difference Dose in Avalanche InGaAs/InP Structures
- Авторлар: Budtolaev A.1, Kravchenko N.1, Khakuashev P.1, Chinareva I.1
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Мекемелер:
- Orion Research and Production Association
- Шығарылым: Том 63, № 3 (2018)
- Беттер: 306-308
- Бөлім: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/199634
- DOI: https://doi.org/10.1134/S106422691803004X
- ID: 199634
Дәйексөз келтіру
Аннотация
Methods for calculation and control of impurity difference dose Qа during the planar procedure of fabrication of avalanche photodiodes (APDs) based on heteroepitaxial InGaAs/InP structures are presented. The developed methods for the difference dose control in avalanche InGaAs/InP structures have been used at various stages of APD fabrication. It has been demonstrated that a tighter impurity dose control from the manufacturer of epitaxial structures, coordination of dose measurement procedures, and correction of diffusion processes for specific impurity doses are needed.
Негізгі сөздер
Авторлар туралы
A. Budtolaev
Orion Research and Production Association
Email: pavel-hak@mail.ru
Ресей, Moscow, 111538
N. Kravchenko
Orion Research and Production Association
Email: pavel-hak@mail.ru
Ресей, Moscow, 111538
P. Khakuashev
Orion Research and Production Association
Хат алмасуға жауапты Автор.
Email: pavel-hak@mail.ru
Ресей, Moscow, 111538
I. Chinareva
Orion Research and Production Association
Email: pavel-hak@mail.ru
Ресей, Moscow, 111538