Methods for Calculation and Control of the Impurity Difference Dose in Avalanche InGaAs/InP Structures
- 作者: Budtolaev A.1, Kravchenko N.1, Khakuashev P.1, Chinareva I.1
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隶属关系:
- Orion Research and Production Association
- 期: 卷 63, 编号 3 (2018)
- 页面: 306-308
- 栏目: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/199634
- DOI: https://doi.org/10.1134/S106422691803004X
- ID: 199634
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Methods for calculation and control of impurity difference dose Qа during the planar procedure of fabrication of avalanche photodiodes (APDs) based on heteroepitaxial InGaAs/InP structures are presented. The developed methods for the difference dose control in avalanche InGaAs/InP structures have been used at various stages of APD fabrication. It has been demonstrated that a tighter impurity dose control from the manufacturer of epitaxial structures, coordination of dose measurement procedures, and correction of diffusion processes for specific impurity doses are needed.
作者简介
A. Budtolaev
Orion Research and Production Association
Email: pavel-hak@mail.ru
俄罗斯联邦, Moscow, 111538
N. Kravchenko
Orion Research and Production Association
Email: pavel-hak@mail.ru
俄罗斯联邦, Moscow, 111538
P. Khakuashev
Orion Research and Production Association
编辑信件的主要联系方式.
Email: pavel-hak@mail.ru
俄罗斯联邦, Moscow, 111538
I. Chinareva
Orion Research and Production Association
Email: pavel-hak@mail.ru
俄罗斯联邦, Moscow, 111538