Email this article Methods for Calculation and Control of the Impurity Difference Dose in Avalanche InGaAs/InP Structures
- Authors: Budtolaev A.K.1, Kravchenko N.V.1, Khakuashev P.E.1, Chinareva I.V.1
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Affiliations:
- Orion Research and Production Association
- Issue: Vol 63, No 3 (2018)
- Pages: 306-308
- Section: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/199634
- DOI: https://doi.org/10.1134/S106422691803004X
- ID: 199634
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Abstract
Methods for calculation and control of impurity difference dose Qа during the planar procedure of fabrication of avalanche photodiodes (APDs) based on heteroepitaxial InGaAs/InP structures are presented. The developed methods for the difference dose control in avalanche InGaAs/InP structures have been used at various stages of APD fabrication. It has been demonstrated that a tighter impurity dose control from the manufacturer of epitaxial structures, coordination of dose measurement procedures, and correction of diffusion processes for specific impurity doses are needed.
About the authors
A. K. Budtolaev
Orion Research and Production Association
Email: pavel-hak@mail.ru
Russian Federation, Moscow, 111538
N. V. Kravchenko
Orion Research and Production Association
Email: pavel-hak@mail.ru
Russian Federation, Moscow, 111538
P. E. Khakuashev
Orion Research and Production Association
Author for correspondence.
Email: pavel-hak@mail.ru
Russian Federation, Moscow, 111538
I. V. Chinareva
Orion Research and Production Association
Email: pavel-hak@mail.ru
Russian Federation, Moscow, 111538
