Отправить статью по E-mail Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers
- Авторы: Nikonov A.V.1,2, Iakovleva N.I.1
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Учреждения:
- Orion Research and Production Association
- Moscow Institute of Physics and Technology (State University)
- Выпуск: Том 63, № 3 (2018)
- Страницы: 277-280
- Раздел: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/199576
- DOI: https://doi.org/10.1134/S1064226918030142
- ID: 199576
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Аннотация
The influence of indirect transitions of Г-L and Г-Х types in the Brillouin zone on optical and electrophysical characteristics of heteroepitaxial layers of А3В5 compounds is estimated by the example of ternary (InGaAs) and quaternary (InGaAsP) compounds. It has been found that consideration of indirect transitions lowers the refractive index of semiconductor compounds by up to 15% in a narrow wavelength range of 0.4—0.6 μm.
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Об авторах
A. Nikonov
Orion Research and Production Association; Moscow Institute of Physics and Technology (State University)
Автор, ответственный за переписку.
Email: ech@li.ru
Россия, Moscow, 111538; Dolgoprudnyi, Moscow oblast, 141700
N. Iakovleva
Orion Research and Production Association
Email: ech@li.ru
Россия, Moscow, 111538
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