Enviar artigo por via de e-mail Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers
- Autores: Nikonov A.1,2, Iakovleva N.1
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Afiliações:
- Orion Research and Production Association
- Moscow Institute of Physics and Technology (State University)
- Edição: Volume 63, Nº 3 (2018)
- Páginas: 277-280
- Seção: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/199576
- DOI: https://doi.org/10.1134/S1064226918030142
- ID: 199576
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Resumo
The influence of indirect transitions of Г-L and Г-Х types in the Brillouin zone on optical and electrophysical characteristics of heteroepitaxial layers of А3В5 compounds is estimated by the example of ternary (InGaAs) and quaternary (InGaAsP) compounds. It has been found that consideration of indirect transitions lowers the refractive index of semiconductor compounds by up to 15% in a narrow wavelength range of 0.4—0.6 μm.
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Sobre autores
A. Nikonov
Orion Research and Production Association; Moscow Institute of Physics and Technology (State University)
Autor responsável pela correspondência
Email: ech@li.ru
Rússia, Moscow, 111538; Dolgoprudnyi, Moscow oblast, 141700
N. Iakovleva
Orion Research and Production Association
Email: ech@li.ru
Rússia, Moscow, 111538
