电邮这篇文章 Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers
- 作者: Nikonov A.1,2, Iakovleva N.1
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隶属关系:
- Orion Research and Production Association
- Moscow Institute of Physics and Technology (State University)
- 期: 卷 63, 编号 3 (2018)
- 页面: 277-280
- 栏目: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/199576
- DOI: https://doi.org/10.1134/S1064226918030142
- ID: 199576
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详细
The influence of indirect transitions of Г-L and Г-Х types in the Brillouin zone on optical and electrophysical characteristics of heteroepitaxial layers of А3В5 compounds is estimated by the example of ternary (InGaAs) and quaternary (InGaAsP) compounds. It has been found that consideration of indirect transitions lowers the refractive index of semiconductor compounds by up to 15% in a narrow wavelength range of 0.4—0.6 μm.
作者简介
A. Nikonov
Orion Research and Production Association; Moscow Institute of Physics and Technology (State University)
编辑信件的主要联系方式.
Email: ech@li.ru
俄罗斯联邦, Moscow, 111538; Dolgoprudnyi, Moscow oblast, 141700
N. Iakovleva
Orion Research and Production Association
Email: ech@li.ru
俄罗斯联邦, Moscow, 111538
