Мақаланы E-mail арқылы жіберу Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers
- Авторлар: Nikonov A.1,2, Iakovleva N.1
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Мекемелер:
- Orion Research and Production Association
- Moscow Institute of Physics and Technology (State University)
- Шығарылым: Том 63, № 3 (2018)
- Беттер: 277-280
- Бөлім: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/199576
- DOI: https://doi.org/10.1134/S1064226918030142
- ID: 199576
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Аннотация
The influence of indirect transitions of Г-L and Г-Х types in the Brillouin zone on optical and electrophysical characteristics of heteroepitaxial layers of А3В5 compounds is estimated by the example of ternary (InGaAs) and quaternary (InGaAsP) compounds. It has been found that consideration of indirect transitions lowers the refractive index of semiconductor compounds by up to 15% in a narrow wavelength range of 0.4—0.6 μm.
Негізгі сөздер
Авторлар туралы
A. Nikonov
Orion Research and Production Association; Moscow Institute of Physics and Technology (State University)
Хат алмасуға жауапты Автор.
Email: ech@li.ru
Ресей, Moscow, 111538; Dolgoprudnyi, Moscow oblast, 141700
N. Iakovleva
Orion Research and Production Association
Email: ech@li.ru
Ресей, Moscow, 111538
