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卷 62, 编号 3 (2017)
Independent operation time of photodetectors of the (3—5)-μm spectral band based on InSb and CdHgTe heteroepitaxial structures
Filatov A., Susov E., Karpov V., Zhilkin V., Ljubchenko S., Kusnezov N., Marushchenko A.
PDF
(Eng)
卷 64, 编号 9 (2019)
Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs
Iakovleva N., Nikonov A., Boltar K., Sednev M.
PDF
(Eng)
卷 61, 编号 3 (2016)
Characteristics of heteroepitaxial structures AlxGa1–xN for p–i–n diode focal plane arrays
Smirnov D., Boltar K., Sednev M., Sharonov Y.
PDF
(Eng)
卷 64, 编号 3 (2019)
Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures
Iakovleva N.
PDF
(Eng)
卷 61, 编号 3 (2016)
Temperature dependence of diffusion length in MCT epitaxial layers
Nikiforov I., Nikonov A., Boltar K., Iakovleva N.
PDF
(Eng)
卷 63, 编号 9 (2018)
Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures
Iakovleva N., Boltar K., Nikonov A., Egorov A.
PDF
(Eng)
卷 61, 编号 3 (2016)
Focal plane arrays mesastructures formation by ion-beam etching
Sednev M., Boltar K., Sharonov Y., Lopukhin A.
PDF
(Eng)
卷 63, 编号 9 (2018)
Current–Voltage Characteristics of n-B-p Structures with Absorbing In0.53Ga0.47As Layer
Sednev M., Boltar K., Irodov N., Demidov S.
PDF
(Eng)
卷 61, 编号 3 (2016)
Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures
Iakovleva N., Boltar K., Sednev M., Patrashin A., Irodov N.
PDF
(Eng)
卷 62, 编号 9 (2017)
Formation of guard ring of avalanche photodiode based on the InGaAs/InP heterostructure
Budtolaev A., Grishina T., Khakuashev P., Chinareva I.
PDF
(Eng)
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