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Informaçao sobre o Autor

Burlakov, I. D.

Edição Seção Título Arquivo
Volume 61, Nº 3 (2016) Articles from the Russian Journal Prikladnaya Fizika Analytical model used to calculate focal-plane-array parameters
Volume 61, Nº 3 (2016) Articles from the Russian Journal Prikladnaya Fizika Investigation of the surface roughness of CdZnTe substrates by different techniques of nanometer accuracy
Volume 61, Nº 3 (2016) Articles from the Russian Journal Prikladnaya Fizika Analytical approach to selection of the optimum structure of avalanche heterophotodiodes based on direct bandgap semiconductors
Volume 61, Nº 3 (2016) Articles from the Russian Journal Prikladnaya Fizika Properties of correlators of thermal and photoinduced stochastic fields of charge-carrier concentrations and currents in IR photodiodes
Volume 61, Nº 10 (2016) Articles from the Russian Journal Prikladnaya Fizika Solid state photoelectronics: the current state and new prospects
Volume 61, Nº 10 (2016) Articles from the Russian Journal Prikladnaya Fizika Solid-state photoelectronics of the ultraviolet range (Review)
Volume 61, Nº 10 (2016) Articles from the Russian Journal Prikladnaya Fizika Principles of an analytical method of optimization of structure parameters of avalanche heterophotodiodes with separated regions of absorption and multiplication
Volume 62, Nº 3 (2017) Articles from the Russian Journal Prikladnaya Fizika Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate
Volume 62, Nº 3 (2017) Articles from the Russian Journal Prikladnaya Fizika Structural properties of cadmium–zinc–tellurium substrates for growth of mercury–cadmiumtellurium solid solutions
Volume 62, Nº 9 (2017) Articles from the Russian Journal Uspekhi Prikladnoi Fiziki Analytical description of avalanche photodiode characteristics. An overview: Part I
Volume 63, Nº 3 (2018) Articles from the Russian Journal Prikladnaya Fizika Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 × 288 Elements
Volume 63, Nº 9 (2018) Articles from the Russian Journal Prikladnaya Fizika Analytical Description of Avalanche Photodiode Characteristics. An Overview: Part II
Volume 63, Nº 9 (2018) Articles from the Russian Journal Prikladnaya Fizika To the Problem of Optimization of Parameters of a Double Heterostructure Based on Direct-Gap Semiconductors for Avalanche Photodiodes
Volume 64, Nº 3 (2019) Article Short-Wave Infrared Camera with a Focal Plane Array Based on InGaAs/InP Heterostructures
Volume 64, Nº 9 (2019) Article Focal Plane Array Based on the InGaAs/InP Heterostructure for 3D Imaging in Short-Wave IR Range