| Issue |
Section |
Title |
File |
| Vol 61, No 3 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Analytical model used to calculate focal-plane-array parameters |
|
| Vol 61, No 3 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Investigation of the surface roughness of CdZnTe substrates by different techniques of nanometer accuracy |
|
| Vol 61, No 3 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Analytical approach to selection of the optimum structure of avalanche heterophotodiodes based on direct bandgap semiconductors |
|
| Vol 61, No 3 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Properties of correlators of thermal and photoinduced stochastic fields of charge-carrier concentrations and currents in IR photodiodes |
|
| Vol 61, No 10 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Solid state photoelectronics: the current state and new prospects |
|
| Vol 61, No 10 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Solid-state photoelectronics of the ultraviolet range (Review) |
|
| Vol 61, No 10 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Principles of an analytical method of optimization of structure parameters of avalanche heterophotodiodes with separated regions of absorption and multiplication |
|
| Vol 62, No 3 (2017) |
Articles from the Russian Journal Prikladnaya Fizika |
Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate |
|
| Vol 62, No 3 (2017) |
Articles from the Russian Journal Prikladnaya Fizika |
Structural properties of cadmium–zinc–tellurium substrates for growth of mercury–cadmiumtellurium solid solutions |
|
| Vol 62, No 9 (2017) |
Articles from the Russian Journal Uspekhi Prikladnoi Fiziki |
Analytical description of avalanche photodiode characteristics. An overview: Part I |
|
| Vol 63, No 3 (2018) |
Articles from the Russian Journal Prikladnaya Fizika |
Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 × 288 Elements |
|
| Vol 63, No 9 (2018) |
Articles from the Russian Journal Prikladnaya Fizika |
Analytical Description of Avalanche Photodiode Characteristics. An Overview: Part II |
|
| Vol 63, No 9 (2018) |
Articles from the Russian Journal Prikladnaya Fizika |
To the Problem of Optimization of Parameters of a Double Heterostructure Based on Direct-Gap Semiconductors for Avalanche Photodiodes |
|
| Vol 64, No 3 (2019) |
Article |
Short-Wave Infrared Camera with a Focal Plane Array Based on InGaAs/InP Heterostructures |
|
| Vol 64, No 9 (2019) |
Article |
Focal Plane Array Based on the InGaAs/InP Heterostructure for 3D Imaging in Short-Wave IR Range |
|
