作者的详细信息
Stadnyk, Yu.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 7 (2016) | Electronic Properties of Semiconductors | Features of conductivity mechanisms in heavily doped compensated V1–xTixFeSb Semiconductor | |
卷 51, 编号 2 (2017) | Electronic Properties of Semiconductors | Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y |