作者的详细信息
Chen, Yu-Chi
期 | 栏目 | 标题 | 文件 |
卷 53, 编号 3 (2019) | Fabrication, Treatment, and Testing of Materials and Structures | Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches |