Автор туралы ақпарат
Chen, Yu-Chi
Шығарылым | Бөлім | Атауы | Файл |
Том 53, № 3 (2019) | Fabrication, Treatment, and Testing of Materials and Structures | Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches |