作者的详细信息
Andreev, V. M.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 9 (2016) | Physics of Semiconductor Devices | Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures | |
卷 50, 编号 10 (2016) | Physics of Semiconductor Devices | GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics | |
卷 50, 编号 10 (2016) | Physics of Semiconductor Devices | On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (–197°C ≤ T ≤ +85°C) | |
卷 52, 编号 13 (2018) | Physics of Semiconductor Devices | AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation |