作者的详细信息
Karandashev, S. A.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 5 (2016) | Physics of Semiconductor Devices | Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure | |
卷 51, 编号 2 (2017) | Physics of Semiconductor Devices | Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures | |
卷 53, 编号 2 (2019) | Review | Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later) |