作者的详细信息

Kozlovski, M.

期 栏目 标题 文件
卷 50, 编号 7 (2016) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films
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