作者的详细信息
Bakhvalov, K.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 5 (2016) | Physics of Semiconductor Devices | Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers | |
卷 50, 编号 9 (2016) | Physics of Semiconductor Devices | On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions | |
卷 50, 编号 10 (2016) | Physics of Semiconductor Devices | Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K) |