作者的详细信息
Eliseev, I. A.
| 期 | 栏目 | 标题 | 文件 |
| 卷 52, 编号 5 (2018) | XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology | Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE |