作者的详细信息
Poloskin, D.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 10 (2016) | Electronic Properties of Semiconductors | Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons | |
卷 51, 编号 12 (2017) | Electronic Properties of Semiconductors | Radiation-produced defects in germanium: Experimental data and models of defects | |
卷 52, 编号 7 (2018) | Physics of Semiconductor Devices | Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System | |
卷 52, 编号 8 (2018) | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation | |
卷 52, 编号 13 (2018) | Electronic Properties of Semiconductors | Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge |