Author Details
Poloskin, D.
Issue | Section | Title | File |
Vol 50, No 10 (2016) | Electronic Properties of Semiconductors | Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons | |
Vol 51, No 12 (2017) | Electronic Properties of Semiconductors | Radiation-produced defects in germanium: Experimental data and models of defects | |
Vol 52, No 7 (2018) | Physics of Semiconductor Devices | Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System | |
Vol 52, No 8 (2018) | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation | |
Vol 52, No 13 (2018) | Electronic Properties of Semiconductors | Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge |