作者的详细信息
Mokhov, D.
| 期 | 栏目 | 标题 | 文件 |
| 卷 52, 编号 16 (2018) | 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY | Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications | |
| 卷 53, 编号 9 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates | |
| 卷 53, 编号 12 (2019) | Fabrication, Treatment, and Testing of Materials and Structures | Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers |