作者的详细信息
Yablonsky, A. N.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 11 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates | |
| 卷 50, 编号 12 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells |