作者的详细信息
Otchenashko, A.
期 | 栏目 | 标题 | 文件 |
卷 51, 编号 6 (2017) | Physics of Semiconductor Devices | n-ZnO/p-CuI barrier heterostructure based on zinc-oxide nanoarrays formed by pulsed electrodeposition and SILAR copper-iodide films | |
卷 52, 编号 9 (2018) | Physics of Semiconductor Devices | Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method |