作者的详细信息
Nepomnyashchikh, A. I.
| 期 | 栏目 | 标题 | 文件 |
| 卷 52, 编号 2 (2018) | Fabrication, Treatment, and Testing of Materials and Structures | Electrical Activity of Extended Defects in Multicrystalline Silicon | |
| 卷 53, 编号 1 (2019) | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | Dependence of the Bulk Electrical Properties of Multisilicon on the Grain Misorientation Parameters |