作者的详细信息
Hananova, A. V.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 12 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors | |
| 卷 51, 编号 11 (2017) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation |