作者的详细信息
Belov, A. I.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 2 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride | |
卷 52, 编号 7 (2018) | Spectroscopy, Interaction with Radiation | Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation | |
卷 52, 编号 12 (2018) | Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 | Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate |