Investigation of the Initial Silicon-on-Sapphire Layer Formed by CVD Techniques
- 作者: Fedotov S.1,2, Sokolov E.1, Statsenko V.1, Romashkin A.2,3, Timoshenkov S.2
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隶属关系:
- JSC EPIEL
- National Research University “MIET”
- Bauman Moscow State Technical University
- 期: 卷 53, 编号 15 (2019)
- 页面: 2016-2023
- 栏目: Technological Processes and Routes
- URL: https://journals.rcsi.science/1063-7826/article/view/207567
- DOI: https://doi.org/10.1134/S1063782619150065
- ID: 207567
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详细
The complexity of optimizing the technology of heteroepitaxy is an important limiting factor of the application of silicon-on-sapphire (SOS) structures. In order to eliminate this technological barrier, we study the gas-phase formation of the initial silicon layer on the R-plane of sapphire. The parameters of the deposited layers are analyzed using industrial quality-control methods and X-ray diffraction, SEM, and Raman-spectroscopy. The resistivity-distribution profiles are obtained by the spreading-resistance (SRP) method. It is shown that the initial stage of growth at a temperature of 910–930°C leads to a decrease in the autodoping of the silicon layer with aluminum from the substrate. Heat treatment of the initial layer formed at a temperature of 945–965°C makes it possible to obtain a high structural quality of SOS structures in a wide range of deposition temperatures (960–1005°C) of the main layer layer. Comparison of the SOS structures obtained with optimal parameters of the developed mode and by means of the conventional process shows a decrease in the full width at half-maximum of the rocking curve to ~0.24°, a decrease in mechanical compressive stresses to 0.8–1.96 GPa, and homogeneity of the resistivity profile to a depth of 180–350 nm. Application of the developed technological modes can significantly improve the homogeneity of the control parameters of the SOS in a single process, which improves the performance of the manufacturing process.
作者简介
S. Fedotov
JSC EPIEL; National Research University “MIET”
编辑信件的主要联系方式.
Email: fedotov@epiel.ru
俄罗斯联邦, Moscow, 124460; Moscow, 124498
E. Sokolov
JSC EPIEL
Email: fedotov@epiel.ru
俄罗斯联邦, Moscow, 124460
V. Statsenko
JSC EPIEL
Email: fedotov@epiel.ru
俄罗斯联邦, Moscow, 124460
A. Romashkin
National Research University “MIET”; Bauman Moscow State Technical University
Email: fedotov@epiel.ru
俄罗斯联邦, Moscow, 124498; Moscow, 105005
S. Timoshenkov
National Research University “MIET”
Email: fedotov@epiel.ru
俄罗斯联邦, Moscow, 124498