On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges
- 作者: Torkhov N.1,2, Babak L.2, Kokolov A.2
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隶属关系:
- Scientific Research Institute of Semiconductor Devices AO “NIIPP”
- Tomsk State University of Control Systems and Radioelectronics
- 期: 卷 53, 编号 12 (2019)
- 页面: 1688-1698
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/207411
- DOI: https://doi.org/10.1134/S1063782619160280
- ID: 207411
如何引用文章
详细
The broad range of possibilities for optimizing the design and electrical parameters of crystals of Schottky diodes, manufactured according to the mesa–substrate and mesa–mesa planar technologies with anode terminals in the form of an air bridge with a whisker, along with the use of higher quality compact models, make it possible to efficiently exploit the physical potential of Schottky contacts when designing monolithic integrated circuits according to diode technologies, increase their reliability, and overcome the significant lag of semiconductor electronics behind optoelectronics in the terahertz (THz) frequency range.
作者简介
N. Torkhov
Scientific Research Institute of Semiconductor Devices AO “NIIPP”; Tomsk State University of Control Systems and Radioelectronics
编辑信件的主要联系方式.
Email: trkf@mail.ru
俄罗斯联邦, Tomsk, 634034; Tomsk, 634050
L. Babak
Tomsk State University of Control Systems and Radioelectronics
Email: trkf@mail.ru
俄罗斯联邦, Tomsk, 634050
A. Kokolov
Tomsk State University of Control Systems and Radioelectronics
Email: trkf@mail.ru
俄罗斯联邦, Tomsk, 634050