The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films
- 作者: Asalzadeh S.1, Yasserian K.1
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隶属关系:
- Department of Physics, Islamic Azad University
- 期: 卷 53, 编号 12 (2019)
- 页面: 1603-1607
- 栏目: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/207363
- DOI: https://doi.org/10.1134/S1063782619160036
- ID: 207363
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详细
This paper investigates the effect of various postannealing cooling rates on structural and electrical properties of Titanium Dioxide (TiO2) thin films. TiO2 thin films were deposited on a silicon substrate using DC magnetron sputtering technique. After annealing TiO2 thin films at 600°C, to investigate the effect of different cooling rates on TiO2 thin films, samples were cooled down from 600°C to room temperature under 3 different rates: 2°C/min, 6°C/min, and 8°C/min. The Surface morphology, crystal structure, and electrical properties of the samples were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD) and Four-point probe (FPP) techniques. It is found that the rate of decreasing temperature after annealing can affect the morphology structure and electrical resistivity of TiO2. The sample with 2°C/min cooling rate has the largest grain size and highest electrical resistivity, while the sample with 8°C/min cooling rate has the smallest grain size and lowest electrical resistivity.
作者简介
S. Asalzadeh
Department of Physics, Islamic Azad University
编辑信件的主要联系方式.
Email: sasalzad@hawk.iit.edu
伊朗伊斯兰共和国, Karaj, Karaj Branch
K. Yasserian
Department of Physics, Islamic Azad University
Email: sasalzad@hawk.iit.edu
伊朗伊斯兰共和国, Karaj, Karaj Branch